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1/12 asb inc. ? sales@asb.co.kr ? tel: +82-42-528-7225 october 2013 ASW214 5 ~ 8000 mhz mmic amplifier (supply voltage = +5 v, t a = +25 ? c, z 0 = 50 ? ) parameters units typical frequency mhz 900 2000 3500 5800 gain db 19.5 18.0 15.0 12.5 s11 db -12.5 -9.0 -9.0 -14.0 s22 db -11 -14 -10 -14 output ip3 1) dbm 30.0 32.0 28.0 24.5 noise figure db 5.5 5.7 6.4 5.7 output p1db dbm 16.0 17.0 14.5 13.5 current ma 52 52 52 52 device voltage v +5 +5 +5 +5 1) oip3 is measured with two tones at an output power of +0 dbm/tone separated by 1 mhz. parameters units min typ. max testing frequency mhz 900 gain db 18.5 19.5 s11 db -12.5 s22 db -11 output ip3 dbm 29 30 noise figure db 5.5 6.0 output p1db dbm 15 16 current ma 47 52 57 device voltage v +5 parameters rating operating case temperature -40 to ? 85 ? c storage temperature -40 to ? 150 ? c device voltage +6 v operating junction temperature +150 ? c input rf power (cw, 50 ? matched)* 25 dbm please find the max. input power data from http://www.asb.co.kr/pdf/maximum_input_power_analysis.pdf features description typical performance absolute maximum ratings ? 19.5 db gain at 900 mhz ? 16 dbm p1db at 900 mhz ? 30 dbm output ip3 at 900 mhz ? 5.5 db nf at 900 mhz ? mttf > 100 years ? single supply the ASW214, a power amplifier mmic, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication sys- tems up to 8 ghz. the amplifier is available in a sot89 package and passes through the stringent dc, rf, and reliability tests. application circuit ? if ? 500 ~ 3500 mhz ? 1700 ~ 2500 mhz ? 3300 ~ 3800 mhz ? 4000 ~ 6000 mhz ? 70 ~ 2700 mhz ? 500 ~ 2700 mhz (3.3 v/ 35 ma) product specifications ASW214 package style: sot89 pin configuration pin no. function 1 rf in 2 gnd 3 rf out & bias
2/12 asb inc. ? sales@asb.co.kr ? tel: +82-42-528-7225 october 2013 ASW214 5 ~ 8000 mhz mmic amplifier pin no. function 1 rf in 2 gnd 3 rf out & bias mounting recommendation (in mm) outline drawing esd classification hbm class 1b voltage level: 500 v~1000 v mm class a voltage level: <200 v caution: esd-sensitive device! moisture sensitivity level (msl) level 3 at 260 ? c reflow esd classification & mois ture sensitivity level symbols dimensions (in mm) min nom max a 1.40 1.50 1.60 l 0.89 1.04 1.20 b 0.36 0.42 0.48 b1 0.41 0.47 0.53 c 0.38 0.40 0.43 d 4.40 4.50 4.60 d1 1.40 1.60 1.75 e 3.64 --- 4.25 e1 2.40 2.50 2.60 e1 2.90 3.00 3.10 h 0.35 0.40 0.45 s 0.65 0.75 0.85 e 1.40 1.50 1.60 ASW214 pxxxx lot no. part no. note : 1. the number and size of ground via holes in a circuit board is critical for thermal and rf grounding considerations. 2. we recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better rf and thermal performance, as shown in the drawing at the left side.
3/12 asb inc. ? sales@asb.co.kr ? tel: +82-42-528-7225 october 2013 ASW214 5 ~ 8000 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +0 dbm/tone separated by 1 mhz. board layout (fr4, 40x40 mm 2 , 0.8t) schematic s-parameters & k-factor application circuit frequency (mhz) 70 150 300 450 magnitude s21 (db) 20.0 20.0 20.0 19.5 magnitude s11 (db) -12 -13 -13 -13 magnitude s22 (db) -11 -11 -11 -11 output p1db (dbm) 16 16 16 16 output ip3 1) (dbm) 30 30 30 31 noise figure (db) 5.3 5.5 6.0 5.5 device voltage (v) +5 +5 +5 +5 current (ma) 52 52 52 52 if 70 ~ 450 mhz +5 v 100 200 300 400 500 0 5 10 15 20 25 gain (db) frequency (mhz) 100 200 300 400 500 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 100 200 300 400 500 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) c1=1000 pf l1=680 nh c2=1000 pf vcc=5 v rf in rf out c3=100 pf c4=1 ? f ASW214 d1=5.6v zener diode r1=2.7 ?
4/12 asb inc. ? sales@asb.co.kr ? tel: +82-42-528-7225 october 2013 ASW214 5 ~ 8000 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +0 dbm/tone separated by 1 mhz. board layout (fr4, 40x40 mm 2 , 0.8t) schematic s-parameters & k-factor application circuit wide band 500 ~ 3500 mhz +5 v frequency (mhz) 500 900 1750 2000 2400 2700 3500 magnitude s21 (db) 19.7 19.5 18.2 17.8 17.0 16.4 15.0 magnitude s11 (db) -12.0 -12.5 -12.5 -12.0 -11.0 -10.0 -9.0 magnitude s22 (db) -11.0 -11.0 -11.0 -11.5 -11.5 -11.0 -10.0 output p1db (dbm) 16.0 16.0 16.0 16.0 16.0 16.0 14.5 output ip3 1) (dbm) 30.0 30.0 30.0 30.0 30.5 30.5 28.0 noise figure (db) 5.7 5.5 5.5 5.7 5.7 6.0 6.4 device voltage (v) +5 current (ma) 52 0 500 1000 1500 2000 2500 3000 3500 4000 0 1 2 3 4 5 stability factor frequency (mhz) c1=100 pf l1=33 nh c2=100 pf rf in rf out ASW214 vcc=5 v c3=100 pf c4=1 ? f d1=5.6v zener diode r1=2.7 ? 0 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 25 gain (db) frequency (mhz) -40 o c 25 o c 85 o c 0 500 1000 1500 2000 2500 3000 3500 4000 -20 -15 -10 -5 0 s11 (db) frequency (mhz) -40 o c 25 o c 85 o c 0 500 1000 1500 2000 2500 3000 3500 4000 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) -40 o c 25 o c 85 o c
5/12 asb inc. ? sales@asb.co.kr ? tel: +82-42-528-7225 october 2013 ASW214 5 ~ 8000 mhz mmic amplifier gain vs. temperature current vs. temperature output ip3 vs. frequency p1db vs. frequency -60 -40 -20 0 20 40 60 80 100 20 30 40 50 60 70 80 current (ma) temperature ( o c) output ip3 vs. tone power (frequency = 2000 mhz) -60 -40 -20 0 20 40 60 80 100 16 17 18 19 20 21 gain (db) temperature ( o c) frequency = 900 mhz 0 500 1000 1500 2000 2500 3000 3500 4000 10 12 14 16 18 20 p1db (dbm) frequency (mhz) -40 o c 25 o c 85 o c 0 500 1000 1500 2000 2500 3000 24 26 28 30 32 34 36 output ip3 (dbm) frequency (mhz) -40 o c 25 o c 85 o c -6-4-2024681012 10 15 20 25 30 35 40 output ip3 (dbm) p out per tone (dbm) -40 o c 25 o c 85 o c
6/12 asb inc. ? sales@asb.co.kr ? tel: +82-42-528-7225 october 2013 ASW214 5 ~ 8000 mhz mmic amplifier 0 2 4 6 810 output power (dbm) -70 -65 -60 -55 -50 -45 -40 aclr (dbc) 20 mhz bw 10 mhz bw 1) test source : lte_fdd_test model 3.1, bw: 10 mhz & 20 mhz, test frequency: 2.6 ghz 2) test source : lte_fdd_test model 3.1, bw: 20 mhz, test frequency: 2.6 ghz lte aclr ? 10 mhz & 20 mhz lte aclr ? 20 mhz
7/12 asb inc. ? sales@asb.co.kr ? tel: +82-42-528-7225 october 2013 ASW214 5 ~ 8000 mhz mmic amplifier performance with varying v device v device (v) current (ma) freq. (mhz) gain (db) s11 (db) s22 (db) oip3 1) (dbm) p1db (dbm) nf (db) +4.8 54 900 19.6 -14.5 -13. 0 31.0 16.4 5.13 2000 17.9 -12.2 -12. 7 30.7 16.6 5.58 3500 15.0 -9.4 -11.5 29.5 15.8 -- +4.65 44 900 19.4 -15.2 -12. 3 27.9 14.4 5.12 2000 17.7 -12.7 -12. 3 28.0 15.4 5.40 3500 14.7 -9.5 -11.7 26.5 13.6 -- +4.45 36 900 18.9 -16.6 -11. 2 24.4 12.4 5.00 2000 17.4 -13.4 -11. 5 24.7 13.0 5.09 3500 14.6 -9.6 -10.4 25.2 13.5 -- 1) oip3 is measured with two tones at an output power of +0 dbm/tone separated by 1 mhz.
8/12 asb inc. ? sales@asb.co.kr ? tel: +82-42-528-7225 october 2013 ASW214 5 ~ 8000 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +0 dbm/tone sepa- rated by 1 mhz. board layout (fr4, 40x40 mm 2 , 0.8t) schematic s-parameters & k-factor application circuit wide band 1700 ~ 2500 mhz +5 v frequency (mhz) 1750 2000 2400 magnitude s21 (db) 18 18 17 magnitude s11 (db) -10 -9 -8 magnitude s22 (db) -15 -14 -11 output p1db (dbm) 17 17 17 output ip3 1) (dbm) 32 32 32 noise figure (db) 5.5 5.7 5.7 device voltage (v) +5 current (ma) 52 c1=100 pf l1=10 nh c2=100 pf rf in rf out ASW214 vcc=5 v c3=100 pf c4=1 ? f d1=5.6v zener diode r1=2.7 ? 1200 1400 1600 1800 2000 2200 2400 2600 2800 0 5 10 15 20 25 gain (db) frequency (mhz) 1200 1400 1600 1800 2000 2200 2400 2600 2800 -20 -15 -10 -5 0 5 s11 (db) frequency (mhz) 1200 1400 1600 1800 2000 2200 2400 2600 2800 -30 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz)
9/12 asb inc. ? sales@asb.co.kr ? tel: +82-42-528-7225 october 2013 ASW214 5 ~ 8000 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +0 dbm/tone separated by 1 mhz. board layout (fr4, 40x40 mm 2 , 0.8t) schematic s-parameters & k-factor application circuit wimax 3300 ~ 3800 mhz +5 v frequency (mhz) 3300 3800 magnitude s21 (db) 15.4 14.4 magnitude s11 (db) -10 -10 magnitude s22 (db) -10 -14 output p1db (dbm) 16 15 output ip3 1) (dbm) 27.5 26.5 noise figure (db) 6.4 6.5 device voltage (v) +5 +5 current (ma) 52 52 c1=10 pf c2=10 pf rf in rf out ASW214 l1=39 nh vcc=5 v c3=100 pf c4=1 ? f d1=5.6v zener diode r1=2.7 ? 3000 3200 3400 3600 3800 4000 0 5 10 15 20 25 gain (db) frequency (mhz) 3000 3200 3400 3600 3800 4000 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 3000 3200 3400 3600 3800 4000 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 4000 0 1 2 3 4 5 stability factor frequency (mhz)
10/12 asb inc. ? sales@asb.co.kr ? tel: +82-42-528-7225 october 2013 ASW214 5 ~ 8000 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +0 dbm/tone separated by 1 mhz. board layout (fr4, 40x40 mm 2 , 0.8t) schematic s-parameters & k-factor application circuit c-band 4000 ~ 6000 mhz +5 v 0 1000 2000 3000 4000 5000 6000 7000 8000 0 1 2 3 4 5 stability factor frequency (mhz) frequency (mhz) 4000 5000 5800 6000 magnitude s21 (db) 14.5 13.5 12.5 11.5 magnitude s11 (db) -11 -11 -14 -14 magnitude s22 (db) -9 -12 -14 -12 output p1db (dbm) 16.0 15.0 13.5 13.5 output ip3 1) (dbm) 28.5 27.0 24.5 24.5 noise figure (db) 5.6 5.5 5.7 6.0 device voltage (v) +5 +5 +5 +5 current (ma) 52 52 52 52 c1=5 pf c2=5 pf rf in rf out ASW214 l1=10 nh vcc=5 v c3=100 pf c4=1 ? f d1=5.6v zener diode r1=2.7 ? 3000 3500 4000 4500 5000 5500 6000 6500 7000 0 5 10 15 20 gain (db) frequency (mhz) 3000 3500 4000 4500 5000 5500 6000 6500 7000 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 3000 3500 4000 4500 5000 5500 6000 6500 7000 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz)
11/12 asb inc. ? sales@asb.co.kr ? tel: +82-42-528-7225 october 2013 ASW214 5 ~ 8000 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +0 dbm/tone separated by 1 mhz. 2) oip2 is measured with two tones (100mhz, 800mhz) at an output power of +0 dbm/tone, 700 mhz. c1=1000 pf l1=680 nh c2=1000 pf vcc=5 v rf in rf out c3=100 pf c4=1 ? f ASW214 d1=5.6v zener diode r1=2.7 ? board layout (fr4, 40x40 mm 2 , 0.8t) schematic s-parameters & k-factor application circuit frequency (mhz) 70 900 1800 2700 magnitude s21 (db) 20.0 19.0 17.5 15.5 magnitude s11 (db) -13 -14 -15 -12 magnitude s22 (db) -11 -10 -9 -12 output p1db (dbm) 16 15 15 15 output ip3 1) (dbm) 29.5 29.5 29.5 29.5 output ip2 2) (dbm) 40 noise figure (db) 5.4 5.3 5.5 5.8 device voltage (v) +5 +5 +5 +5 current (ma) 52 52 52 52 onu 70 ~ 2700 mhz +5 v 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 gain (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz)
12/12 asb inc. ? sales@asb.co.kr ? tel: +82-42-528-7225 october 2013 ASW214 5 ~ 8000 mhz mmic amplifier rf in rf out ASW214 v supply =+3.3 v c1=100 pf c2=100 pf l1=33 nh c4=1 ? f c3=100 pf r1=360 ? rf in rf out ASW214 v supply =+3.3 v c1=100 pf c2=100 pf l1=33 nh c4=1 ? f c3=100 pf r1=360 ? 1) oip3 is measured with two tones at an output power of -3 dbm/tone separated by 1 mhz. board layout (fr4, 40x40 mm 2 , 0.8t) schematic s-parameters & k-factor application circuit wide band 500 ~ 2700 mhz +3.3 v/ 35 ma frequency (mhz) 900 2000 magnitude s21 (db) 18.0 16.3 magnitude s11 (db) -11 -13 magnitude s22 (db) -12 -10 output p1db (dbm) 12.3 12.5 output ip3 1) (dbm) 24 24.5 noise figure (db) 5.4 5.6 device voltage (v) +3.3 +3.3 current (ma) 35 35 0 300 600 900 1200 1500 1800 2100 2400 2700 0 5 10 15 20 25 gain (db) frequency (mhz) 0 300 600 900 1200 1500 1800 2100 2400 2700 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 0 300 600 900 1200 1500 1800 2100 2400 2700 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency [mhz]

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